Silicon Wafer Thickness Variation Measurements using Infrared Interferometry
نویسندگان
چکیده
Tony L. Schmitz, Angela Davies, Chris J. Evans National Institute of Standards and Technology, Gaithersburg, MD 20899 Robert E. Parks Optical Perspectives Group, LLC, Tucson, AZ
منابع مشابه
Study of Properties of AlN Thin Films Deposited by Reactive Magnetron Sputtering
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...
متن کاملIns-situ Film Thickness Measurements for Real-time Monitoring and Control of Advanced Photoresist Track Coating Systems
This paper will explore the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry . Reflected light from the wafer's surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recognition algorithm. The instrumentation used...
متن کاملTemperature-dependent refractive index measurements of wafer-shaped InAs and InSb.
An experimental method is introduced to measure the refractive index and its temperature dependence for wafer-shaped infrared materials over a continuous temperature range. Using a combination of Michelson interferometry, Fabry-Perot interferometry, and a temperature-controlled cryostat in a laser micrometer, refractive index values and their temperature coefficients can be measured for any spe...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملUse of Michelson and Fabry-Perot interferometry for independent determination of the refractive index and physical thickness of wafers.
We present a method to independently measure the refractive index and the thickness of materials having flat and parallel sides by using a combination of Michelson and Fabry-Perot interferometry techniques. The method has been used to determine refractive-index values in the infrared with uncertainties in the third decimal place and thicknesses accurate to within +/- 5 microm for materials at r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2003